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BU810
MEDIUM VOLTAGE NPN FAST-SWITCHING DARLINGTON TRANSISTOR
s s s s s
SGS-THOMSON PREFERRED SALESTYPE NPN DARLINGTON LOW BASE-DRIVE REQUIREMENTS FAST SWITCHING SPEED INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE
APPLICATIONS HORIZONTAL DEFLECTION FOR MONOCHROME TVs s GENERAL PURPOSE SWITCHING
s
3 1 2
DESCRIPTION The BU810 is a Multiepitaxial Planar NPN Transistor in TO-220 package. It is intended for use in high frequency and efficency converters, switching regulators and motor control.
TO-220
INTERNAL SCHEMATIC DIAGRAM
R = 200
ABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEO V EBO IC I CM IB P tot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Total Power Dissipation at T case 25 C
o
Value 600 400 5 7 10 2 75 -65 to 150 150
Unit V V V A A A W
o o
Storage Temperature Junction Temperature
C C 1/4
June 1997
BU810
THERMAL DATA
R thj-case Thermal Resistance Junction-case Max 1.66
o
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol I CES I CEO I EBO Parameter Collector Cut-off Current (V BE = 0) Collector Cut-off Current (IB = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CE = 600 V V CE = 400 V V EB = 5 V I C = 0.1 A IC = 2 A IC = 4 A IC = 7 A IC = 2 A IC = 4 A IB = 20 mA IB = 200 mA IB = 0.7 A IB = 20 mA IB = 200 mA 400 2 2.5 3 2.2 3 3 Min. Typ. Max. 200 1 150 Unit A mA mA V V V V V V V
V CEO(sus) Collector-Emitter Sustaining Voltage V CE(sat) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage
V BE(sat) VF
Diode Forward Voltage I F = 7 A
RESISTIVE SWITCHING TIMES
Symbol t on ts tf Parameter Turn-on Time Storage Time Fall Time Test Conditions V Clamp = 250V V BE(off) = -5 V I C = 2A IB1 = 20mA Min. Typ. Max. 0.6 1.5 0.5 Unit s s s
INDUCTIVE SWITCHING TIMES
Symbol ts tf ts tf Parameter Storage Time Fall Time Storage Time Fall Time Test Conditions V Clamp = 250V V BE(off) = -5 V V Clamp = 250V V BE(off) = -5 V I C = 2A IB1 = 20mA L = 500H I C = 7A IB1 = 0.7A L = 500H Min. Typ. Max. 1.5 0.4 1.5 0.4 Unit s s s s
* Pulsed : Pulse duration = 300 s, duty cycle = 2%
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BU810
TO-220 MECHANICAL DATA
DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107
A
C
D1
L2
F1
D
G1
E
Dia. L5 L7 L6 L4
P011C
L9
F2
F
G
H2
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BU810
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ...
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